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| 2SK1948 Silicon N-Channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK1948 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 30 50 200 50 200 150 -55 to +150 Unit V V A A A W C C 2 2SK1948 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 30 -- -- 2.0 -- 20 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.047 30 5830 2310 265 70 260 430 190 1.2 450 Max -- -- 10 250 3.0 0.06 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0, diF / dt = 100 A / s Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 25 A VGS = 10 V*1 I D = 25 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 25 A VGS = 10 V RL = 1.2 Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1948 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) Drain Current ID (A) Maximum Safe Operation Area 1000 300 100 30 10 3 1 0.3 0 50 100 150 Case Temperature Tc (C) 0.1 1 a are n) this S (o in D ion y R rat b pe mited D PW O li C = in 200 100 1 10 0 0 s s 1 Op 10 ms er at ms ion (1 (T Sh c = ot 25 ) C ) Ta = 25C 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 Drain Current ID (A) 80 6V 60 5.5 V 40 5V 20 4V VGS = 3.5 V 4 8 12 16 20 10 V 8V 50 Pulse Test Drain Current I D (A) 40 30 20 10 Typical Transfer Characteristics Pulse Test VDS = 10 V Tc = 25C -25C 75C 0 0 Drain to Source Voltage VDS (V) 2 4 6 8 10 Gate to Source Voltage VGS (V) 4 2SK1948 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 5 4 3 50 A 2 1 20 A I D = 10 A 4 8 12 16 20 Gate to Source Voltage VGS (V) Pulse Test Static Drain to Source on State Resistance R DS (on) ( ) Static Drain to Source on State Resistance vs. Drain Current 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 2 5 10 20 50 100 200 Drain Current I D (A) VGS = 10 V Pulse Test Static Drain to Source on State Resistance RDS (on) ( ) 0.2 0.16 0.12 0.08 Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test Forward Transfer Admittance vs. Drain Current 100 Forward Transfer Admittance |yfs| (S) 50 20 10 5 2 1 0.5 V DS = 10 V Pulse Test Tc = 25C -25C 75C I D= 50 A 10 A, 20 A 0.04 0 -40 0 40 80 120 160 1 2 5 10 20 50 Case Temperature TC (C) Drain Current I D (A) 5 2SK1948 Body to Drain Diode Reverse Recovery Time 5000 Reverse Recovery Time t rr (ns) 2000 Capacitance C (pF) 1000 500 200 100 50 1 2 5 10 20 50 100 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) di/dt = 100 A/s, VGS = 0 Ta = 25C 1000 Coss 10000 Ciss Typical Capacitance vs. Drain to Source Voltage 100 VGS = 0 f = 1 MHz Crss Reverse Drain Current IDR (A) Dynamic Input Characteristics Drain to Source Voltage VDS (V) 500 400 300 200 100 VDD = 200 V 100 V 50 V 80 160 240 320 Gate Charge Qg (nc) VDD = 200 V 100 V 50 V I D = 50 A V DS Gate to Source Voltage VGS (V) VGS 20 16 12 8 4 0 400 1000 Switching Characteristics t d(off) Switching Time t (ns) 500 200 100 50 20 10 0.5 1 2 5 10 20 50 Drain Current I D (A) VGS = 10 V, VDD = 30 V : PW = 5 s tf tr t d (on) 0 6 2SK1948 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current I DR (A) Pulse Test 40 30 20 10 VGS = 10 V 0, -5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance S (t) 3 D=1 0.5 0.3 0.2 0.1 1 TC = 25C 0.1 0.05 0.02 0.01 ch-c (t) = S (t) * ch-c ch-c = 0.625C/W, TC = 25C PDM ulse ot P 0.03 1 Sh T 1m 10 m Pulse Width PW (s) 100 m PW D = PW T 0.01 10 100 1 10 7 2SK1948 Switching Time Test Circuit Vin Monitor Waveforms 90% Vout Monitor D.U.T. RL Vin 10 V 50 Vin Vout VDD . = 30 V . 10% 10% 10% 90% td (off) 90% td (on) tr tf 8 Unit: mm 6.0 0.2 5.0 0.2 3.3 0.2 20.0 0.3 26.0 0.3 20.0 0.6 2.5 0.3 1.4 3.0 2.2 1.2 +0.25 -0.1 5.45 0.5 1.0 0.6 +0.25 -0.1 2.8 0.2 5.45 0.5 3.8 7.4 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PL -- -- 9.9 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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